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|---|---|---|---|---|---|---|---|---|
| FDA38N30 | 300 | 38.0 | 0.085 | 60 | 2600 | TO-3PN | N-channel, DMOS with flat belt technology for AC-DC, etc. | |
| FQA38N30 | 300 | 38.4 | 0.0650 | 90 | 3380 | TO-3PN | N-channel enhancement mode for switching power supplies, DC / DC | |
| FDA59N30 | 300 | 59.0 | 0.056 | 77 | 3590 | TO-3P | N-channel enhancement mode for switching power supplies, DC / DCN-channel enhancement mode for power factor correction | |
| FDP15N40 | 400 | 15.0 | 0.300 | 28 | 1310 | TO-220/F | N-channel enhancement mode for efficient switching power supplies, power factor correction | |
| FDP24N40 | 400 | 24.0 | 0.175 | 46 | 2270 | TO-220/F | ||
| FQP11N50CF | 500 | 11.0 | 0.4800 | 43 | 1515 | TO-220 | DMOS technology, N-channel enhancement mode, high avalanche tolerance, enhanced dv / dt performance, parasitic ultrafast recovery diode for efficient switching power supplies, power factor correction | |
| FQPF11N50CF | 500 | 11.0* | 0.4800 | 43 | 1515 | TO-220F | ||
| FQP13N50 | 500 | 12.5 | 0.3300 | 45 | 1800 | TO-220 | DMOS technology, N-channel enhancement mode, high avalanche tolerance, excellent switching characteristics, enhanced dv / dt capability 100% avalanche detection tolerance for efficient switching power supplies, power factor correction, half-bridge electronic lighting circuits | |
| FQPF13N50 | 500 | 12.5* | 0.3300 | 45 | 1800 | TO-220F | ||
| FQP13N50C | 500 | 13.0 | 0.390 | 43 | 1580 | TTO-220/F | ||
| FQA16N50 | 500 | 16.0 | 0.2500 | 60 | 2300 | TO-3P | ||
| FDP16N50 | 500 | 16.0 | 0.380 | 32 | 1495 | TO-220/F | N-channel enhancement mode, DMOS technology | |
| FDA16N50_F109 | 500 | 16.5 | 0.380 | 32 | 1495 | TO-3PN | N-channel UniFET, applicable PDP TV, uninterruptible power supply | |
| FDP18N50 | 500 | 18.0 | 0.265 | 45 | 2200 | TO-220/F | N-channel enhancement mode, DMOS technology | |
| FQP18N50V2 | 500 | 18.0 | 0.2250 | 42 | 2530 | TO-220 | ||
| FQPF18N50V2 | 500 | 18.0* | 0.2250 | 42 | 2530 | TO-220F | ||
| FDA18N50 | 500 | 19.0 | 0.2200 | 45 | 2200 | TO-3P | ||
| IRFP460C | 500 | 20.0 | 0.2000 | 130 | 4590 | TO-3PN | ||
| FDA20N50 | 500 | 22.0 | 0.2000 | 45.6 | 2400 | TO-3P | ||
| FDA24N50 | 500 | 24.0 | 0.1600 | 65 | 3120 | TO-3PN | ||
| FDA24N50F | 500 | 24.0 | 0.1660 | 65 | 3240 | TO-3PN | ||
| FQA24N50 | 500 | 24.0 | 0.1560 | 90 | 3500 | TO-3P | DMOS technology, N-channel enhancement mode, enhanced dv / dt capability for efficient switching power supplies, power factor correction, motor drives, welding power supply, etc. | |
| FQA28N50 | 500 | 28.4 | 0.1260 | 110 | 4300 | TO-3P | ||
| FDA28N50 | 500 | 28.0 | 0.1220 | 80 | 3866 | TO-3PN | N-channel enhancement mode for efficient switching power supply | |
| FQL40N50 | 500 | 40.0 | 0.0850 | 155 | 5800 | TO-264 | N-channel enhancement mode for motor drives, welding power | |
| FQL40N50F | 500 | 40.0 | 0.0850 | 155 | 5800 | TO-264 | Parasitic fast recovery diodes, phase-shifted full-bridge circuit applicable | |
| FDH45N50F | 500 | 45.0 | 0.120 | 105 | 5100 | TO-247 | For lighting, uninterruptible power supply, AC-DC | |
| FDA50N50 | 500 | 48.0 | 0.0890 | 105 | 4979 | TO-3P | DMOS technology, N-channel enhancement mode, high avalanche tolerance, excellent switching characteristics for efficient switching power supplies, power factor correction | |
| FDH50N50 | 500 | 48.0 | 0.0890 | 105 | 4979 | TO-247 | ||
| FDL100N50F | 500 | 100.0 | 0.055 | 238 | 12000 | TO-264 | N-channel enhancement mode for power factor correction | |
| FQP5N60C | 600 | 4.5 | 2.0000 | 15 | 515 | TO-220 | DMOS technology, N-channel enhancement mode, low gate charge, high avalanche tolerance, excellent switching characteristics, enhanced dv / dt capability for efficient switching power supplies, power factor correction, half-bridge electronic lighting circuits | |
| FQPF5N60C | 600 | 4.5* | 2.0000 | 15 | 515 | TO-220F | ||
| FQP8N60C | 600 | 7.5 | 1.0000 | 28 | 965 | TO-220 | ||
| *Drain current limited by maximum junction temperature | ||||||||
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