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FQPF8N60C 600 7.5* 1.0000 28 965 TO-220F DMOS technology, N-channel enhancement mode, low gate charge, high avalanche tolerance, excellent switching characteristics, enhanced dv / dt capability for efficient switching power supplies, power factor correction, half-bridge electronic lighting circuits
FQP10N60CF 600 9.0 0.6100 44 1570 TO-220
FQPF10N60CF 600 9.0* 0.6100 44 1570 TO-220F
FQP10N60C 600 9.5 0.6000 44 1570 TO-220
FQP12N60C 600 12.0 0.5300 48 1760 TO-220
FQPF12N60C 600 12.0* 0.5300 48 1760 TO-220F
FCP16N60 600 16.0 0.220 50 2100 TO-220/F N-channel for AC / DC, LCD, LED, PDP TV, too can inverters
FCP190N60 600 20.2 0.199 57 2200 TO-220/F
FQA24N60 600 23.5 0.1800 110 4200 TO-3PN N-channel enhancement mode for efficient switching power supply
FCA35N60 600 35.0 0.079 139 4990 TO-3PN A new generation of high voltage MOSFET
FCA47N60 600 47.0 0.0580 210 5900 TO-3PN Based on an advanced charge balance principle, N-channel enhancement mode, switching characteristics superior, to meet the various switching AC / DC to small, high-efficiency direction
FCA47N60F 600 47.0 0.0620 210 5900 TO-3PN
FCH47N60 600 47.0 0.070 210 5900 TO-247 Super MOS, for solar inverters
FCH76N60 600 76.0 0.036 218 9310 TO-247 Super MOS for solar inverters, AC / DC
FCH041N06E 600 76.0 0.041 277 10800 TO-247 The new high-pressure SJ junction MOSFET, for PFC etc.
FQP6N80C 800 5.5 2.1000 21 1010 TO-220 DMOS technology, N-channel enhancement mode, low gate charge, high avalanche tolerance, excellent switching characteristics for efficient switching power supply
FQPF6N80C 800 5.5* 2.1000 21 1010 TO-220F
FQP8N80C 800 8.0 1.550 35 1580 TO-220/F N-channel enhancement mode, ultra-fast switching 100% avalanche detection
FQA10N80C 800 10.0 0.9300 45 2150 TO-3P DMOS technology, N-channel enhancement mode, switching characteristics superior, enhanced dv / dt capability for efficient switching power supplies, power factor correction
FQA13N80 800 12.6 0.750 4568 2700 TO-3P
FQA13N80F109 800 12.6 0.5800 68 2700 TO-3PN
FQP4N90C 900 4.0 3.5000 17 740 TO-220 DMOS technology, N-channel enhancement mode, switching characteristics superior, enhanced dv / dt capability 100% avalanche detection tolerance for efficient switching power supplies
FQPF4N90C 900 4.0* 3.5000 17 740 TO-220F
FQP4N90 900 4.2 2.7000 24 860 TO-220
FQA6N90CF109 900 6.0 1.9300 30 1360 TO-3PN DMOS technology, N-channel enhancement mode
FQA6N90 900 6.4 1.500 40 1440 TO-3P DOMOS process, N-channel enhancement mode
FQP9N90C 900 8.0 1.1200 45 2100 TO-220 DMOS technology, N-channel enhancement mode, switching characteristics superior, enhanced dv / dt capability 100% avalanche detection tolerance for efficient switching power supplies
FQPF9N90C 900 8.0* 1.1200 45 2100 TO-220F
FQA9N90C 900 9.0 1.400 45 2100 TO-3P DOMOS process, N-channel enhancement mode
FQA9N90CF109 900 9.0 1.1200 45 2100 TO-3PN DMOS technology, N-channel enhancement mode, excellent switching characteristics for efficient switching power supplies, power factor correction, half-bridge electronic lighting circuits
FQA11N90C 900 11.0 1.100 60 2530 TO-3P
FQA11N90CF109 900 11.0 0.9100 60 2530 TO-3PN
FQD2N100 1000 1.6 9000 12 400 D/I-PAK
FQH8N100C 1000 8.0 1.2000 53 2475 TO-247
FQH8N100C 1000 8.0 1.45 53 2475 TO-3P N-channel enhancement mode, DOMOS process
*Drain current limited by maximum junction temperature
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