| This series of Q-FET has excellent performance through fashioning
traditional P Channel Design and increasing gate Metal Oxide Film's
Thickness . Avalanche Rugged Technology . Very Low Intrinsic Capacitances
. Unrivalled Gate Charge : 31nc ( Typ ) . Extended Safe Operating
Area . Lower RDS (ON) :0.018 
(Typ ) . Build-in Ultra-fast Inverted Diode .
P- channel MOSFET
FAIRCHILD New “B-series” MOSFET And “A-series”
Enhanced MOSFET
| IRF630B |
IRF640B |
IRF830B |
IRF840B |
| IRFP250B |
IRFP450B |
SSP10N60B |
IRFP460A |
| IRF530A |
IRF540A |
IRF640A |
SSH70N10A |
America IR's MOSFET
| IRFZ44N |
55V/41A/0.024 |
IRL3803 |
30V/140A/0.006/TO220 |
| IRF3205 |
55V/98A/0.008/TO220 |
IRF2807 |
75V/71A/0.013/TO220 |
| IRF3710 |
100V/46A/0.028/TO220 |
IRFPS37N50A |
500V/36A/0.13 |
| IRF540N |
IRF640A |
IRF740 |
IRF840 |
IRF530A |
| IRF630A |
IRF730 |
IRF830A |
IRFP150 |
IRFP250 |
| IRFP350 |
IRFP360 |
IRFP450 |
IRFP460 |
IRFP250 |
| IRFP250A |
|
|
|
|
INTERSIL Companies' MOSFET
| HUF76445P3 |
60V/75A/0.0075¦¸/TO220 |
HUF75545P3 |
80V/75A/0.01¦¸/TO220 |
| HUF75645P3 |
100V/75A/0.014¦¸/TO220 |
HUF75652G3 |
100V/75A/0.008¦¸/TO3P |
| HUF75652G3 |
|
HUF75852G3 |
|
| FDP2532 |
|
FDP3652 |
|
| FDP3632 |
|
FDP15N50 |
|
| FDH27N50 |
|
FDH44N50 |
|
Acrobat Download
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